RF1S540 데이터 시트보기 (PDF) - Harris Semiconductor
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RF1S540 Datasheet PDF : 7 Pages
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IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
- 1450 -
pF
- 550
-
pF
CRSS
- 100
-
pF
LD Measured From the
Modified MOSFET
-
3.5
-
nH
Contact Screw on Tab Symbol Showing the
To Center of Die
Internal Devices
Measured From the
Drain Lead, 6mm
Inductances
D
-
4.5
-
nH
(0.25in) from Package to
LD
Center of Die
LS Measured From the
G
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
LS
-
7.5
-
nH
S
RθJC
RθJA
RθJA
Free Air Operation
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
-
-
1
oC/W
-
-
80 oC/W
-
-
62 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
28
A
D
-
-
110
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13)
-
-
2.5
V
trr
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
70 150 300 ns
QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
0.44 1.0 1.9
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25Ω, peak IAS = 28A. (Figures 15, 16).
5-3
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