K2462 데이터 시트보기 (PDF) - NEC => Renesas Technology

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K2462

MOS FIELD EFFECT TRANSISTOR , 100V, 20A/15A

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2462

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2462 is N-Channel MOS Field Effect Transistor de-

signed for high current switching applications.

FEATURES

• Low On-Resistance

RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)

RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)

• Low Ciss Ciss = 790 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

PACKAGE DIMENSIONS

(in millimeters)

10.0 ±0.3

4.5 ±0.2

3.2 ±0.2

2.7 ±0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

VDSS

100

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID(DC)

±15

A

Drain Current (pulse)*

ID(pulse)

±60

A

Total Power Dissipation (Tc = 25 ˚C) PT1

30

W

Total Power Dissipation (TA = 25 ˚C) PT2

2.0

W

Channel Temperature

Tch

150

˚C

Storage Temperature

Tstg

–55 to +150 ˚C

Single Avalanche Current**

IAS

15

A

Single Avalanche Energy**

EAS

22.5 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

0.7 ±0.1

2.54

1.3 ±0.2

2.5 ±0.1

1.5 ±0.2 0.65 ±0.1

2.54

1 23

1. Gate

2. Drain

3. Source

MP-45F(ISOLATED TO-220)

Drain

Gate

Body

Diode

Gate Protection

Diode

Source

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is

externally required if a voltage exceeding rated voltage may

be applied to this device.

Document No. D10031EJ1V0DS00

Date Published May 1995 P

Printed in Japan

©

1995

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