K2462 데이터 시트보기 (PDF) - NEC => Renesas Technology
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K2462 Datasheet PDF : 8 Pages
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2SK2462
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
7.0
TYP.
0.10
0.12
1.6
14
790
280
88
16
110
88
62
33
5.4
25
1.1
160
670
MAX.
0.14
0.17
2.0
10
±10
UNIT
Ω
Ω
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V, ID = 8.0 A
VGS = 4 V, ID = 8.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 8.0 A
VDS = 100 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 8.0 A
VGS(on) = 10 V
VDD = 50 V
RG = 10 Ω
ID = 15 A
VDD = 80 V
VGS = 10 V
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
di/dt = 100 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
PG.
50 Ω
Starting Tch
RL
VDD
D.U.T.
RG
PG.
RG = 10 Ω
VGS
0
t
t = 1µs
Duty Cycle ≤ 1 %
RL VGS VGS
Wave 010 %
VDD Form
VGS (on)
ID
90 %
ID
Wave
Form
10 %
0
td (on)
ID
t t r
d (off)
90 %
90 %
10 %
tf
ton
toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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