EL5220CY 데이터 시트보기 (PDF) - Elantec -> Intersil
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EL5220CY Datasheet PDF : 13 Pages
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EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (TA = 25°C)
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only
and functional device operation is not implied
Supply Voltage between VS+ and VS-
+18V
Input Voltage
VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current
30mA
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
ESD Voltage
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+= +5V, VS - = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.
Parameter
Input Characteristics
Description
Condition
VOS
TCVOS
IB
RIN
CIN
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
AVOL
Open-Loop Gain
Output Characteristics
VCM = 0V
[1]
VCM = 0V
for VIN from -5.5V to +5.5V
-4.5V ≤ VOUT ≤ +4.5V
VOL
Output Swing Low
VOH
Output Swing High
ISC
Short Circuit Current
IOUT
Output Current
Power Supply Performance
IL = -5mA
IL = 5mA
PSRR
Power Supply Rejection Ratio
IS
Supply Current (Per Amplifier)
Dynamic Performance
SR
Slew Rate [2]
tS
Settling to +0.1% (AV = +1)
BW
-3dB Bandwidth
GBWP
Gain-Bandwidth Product
PM
Phase Margin
CS
Channel Separation
VS is moved from ±2.25V to ±7.75V
No load
-4.0V ≤ VOUT ≤ +4.0V, 20% to 80%
(AV = +1), VO = 2V step
RL = 10kΩ, CL = 10pF
RL = 10kΩ, CL = 10pF
RL = 10kΩ, CL = 10 pF
f = 5MHz
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
Min
Typ
Max
Unit
2
12
mV
5
µV/°C
2
50
nA
1
GΩ
1.35
pF
-5.5
+5.5
V
50
70
dB
75
95
dB
-4.92
-4.85
V
4.85
4.92
V
±120
mA
±30
mA
60
80
dB
500
750
µA
10
V/µs
500
ns
12
MHz
8
MHz
50
°
75
dB
2
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