BFS17W 데이터 시트보기 (PDF) - Philips Electronics
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BFS17W Datasheet PDF : 6 Pages
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE UNIT
190
K/W
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
F
noise figure
CONDITIONS
IE = 0; VCB = 10 V
IC = 2 mA; VCE = 1 V
IC = 25 mA; VCE = 5 V;
f = 500 MHz
IE = ie = 0; VCB = 10 V;
f = 1 MHz
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
IB = ib = 0; VCE = 5 V;
f = 1 MHz; Tamb = 25 °C
IC = 2 mA; VCE = 5 V;
f = 500 MHz; ΓS = Γopt
MIN.
−
25
−
TYP.
−
90
1.6
MAX.
10
−
−
UNIT
nA
GHz
−
0.8
1.5
pF
−
2
−
pF
−
0.75
−
pF
−
4.5
−
dB
handbook4,0h0alfpage
P tot
(mW)
300
MLB587
200
100
0
0
50
100
150
200
Ts ( o C)
Fig.2 Power derating curve.
1995 Sep 04
handbook,6h0alfpage
hFE
40
MBG237
20
0
10−1
1
10 IC (mA) 102
VCE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
3
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