BFT25 데이터 시트보기 (PDF) - Philips Electronics
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BFT25 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFT25
handbook,6h0alfpage
h FE
40
MEA908
20
0
10 –3
10–2
10 –1
1 I C (mA) 10
VCE = 1 V; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current.
1
Cc
(pF)
0.8
MEA914
0.6
0.4
0.2
0
0
2
4
6
8
10
V CB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
handbook, h3alfpage
fT
(GHz)
2
MEA907
1
0
0
0.5
1
1.5
2
IC (mA)
VCE = 1 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
November 1992
handbook, h8alfpage
F
(dB)
6
MEA909
4
2
0
10–2
10–1
1 I C (mA) 10
VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 °C.
Fig.5 Minimum noise figure as a function of
collector current.
4
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