BFG135 데이터 시트보기 (PDF) - Philips Electronics
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BFG135 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering
point
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL
RESISTANCE
30 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
hFE
Cc
Ce
Cre
fT
GUM
Vo
d2
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain
output voltage
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 10 V
IC = 100 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
note 1
note 2
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 °C;
f(p+q) = 450 MHz;
fp = 50 MHz; fq = 400 MHz
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 °C;
f(p+q) = 810 MHz;
fp = 250 MHz; fq = 560 MHz
MIN.
−
80
−
−
−
−
TYP.
−
130
2
7
1.2
7
MAX. UNIT
1
µA
−
−
pF
−
pF
−
pF
−
GHz
−
16
−
dB
−
12
−
dB
−
900 −
mV
−
850 −
mV
−
−58 −
dB
−
−53 −
dB
Notes
1. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
1995 Sep 13
3
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