ESM5045DV 데이터 시트보기 (PDF) - STMicroelectronics

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ESM5045DV

NPN DARLINGTON POWER MODULE

STMicroelectronics 

®

ESM5045DV

NPN DARLINGTON POWER MODULE

s HIGH CURRENT POWER BIPOLAR MODULE

s VERY LOW Rth JUNCTION CASE

s SPECIFIED ACCIDENTAL OVERLOAD

AREAS

s ULTRAFAST FREEWHEELING DIODE

s FULLY INSULATED PACKAGE (UL

COMPLIANT)

s EASY TO MOUNT

s LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:

s MOTOR CONTROL

s SMPS & UPS

s WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCEV Collector-Emitter Voltage (VBE = -5 V)

VCEO(sus) Collector-Emitter Voltage (IB = 0)

VEBO Emitter-Base Voltage (IC = 0)

IC

Collector Current

ICM Collector Peak Current (tp = 10 ms)

IB

Base Current

IBM Base Peak Current (tp = 10 ms)

Ptot Total Dissipation at Tc = 25 oC

Visol Insulation Withstand Voltage (RMS) from All

Four Terminals to Exernal Heatsink

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

September 2003

Value

600

450

7

60

90

6

12

175

2500

-55 to 150

150

Unit

V

V

V

A

A

A

A

W

V

oC

oC

1/8

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