MPSA29 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MPSA29 Datasheet PDF : 2 Pages
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NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 100 µA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 80 V, IE = 0
VCE = 80 V, IE = 0
VEB = 10 V, IC = 0
100
100
12
100
500
100
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 mA
VCE = 5.0 V, IC = 100 mA
IC = 10 mA, IB = 0.01 mA
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
10,000
10,000
1.2
1.5
2.0
SMALL SIGNAL CHARACTERISTICS
fT
Cobo
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
125
f = 100 MHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
8.0
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V
V
V
nA
nA
nA
V
V
V
MHz
pF
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