2SD2635 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SD2635

NPN Epitaxial Planar Silicon Darlington Transistor

SANYO -> Panasonic 

Continued from preceding page.

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Electrical Connection

C

B

R1 R2

E

R1≈5kΩ

R2≈500Ω

2SD2635

Symbol

Conditions

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

VCEO(sus)

IC=1A, IB=2mA

IC=1A, IB=2mA

IC=100µA, IE=0

IC=10mA, RBE=∞

IC=1A, L=10mH, Clamped

Ratings

Unit

min typ max

1.5 V

2.0 V

120

V

120

V

120

V

IC -- VCE

2.0

350µA 400µA

1.6

300µA

250µA

1.2

200µA

150µA

0.8

100µA

0.4

0

0

10000

7

5

3

2

1000

7

5

3

2

IB=0

1

2

3

4

5

Collector-to-Emitter Voltage, VCE – V IT02069

hFE -- IC

Ta=75-°-C25°C

25°C

100

7

5

7 0.01

2 3 5 7 0.1 2 3 5 7 1.0 2 3

Collector Current, IC – A

IT02071

IC -- VBE

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Base-to-Emitter Voltage, VBE – V IT02070

VCE(sat) -- IC

2

IC / IB=500

1.5

1.0

9

Ta= --25°C

8

25°C

7

75°C

6

5

5 7 0.1

23

5 7 1.0

Collector Current, IC – A

23

IT02072

No.6449–2/3

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