Philips Semiconductors
NPN general purpose transistor
Product specification
MPSA06
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
fT
collector-emitter saturation voltage
base-emitter voltage
transition frequency
CONDITIONS
IE = 0; VCB = 80 V
IC = 0; VEB = 5 V
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 100 mA; IB = 10 mA
IC = 100 mA; VCE = 1 V
IC = 10 mA; VCE = 2 V; f = 100 MHz
MIN.
−
−
100
100
−
−
100
MAX.
50
50
−
−
250
1.2
−
UNIT
nA
nA
mV
V
MHz
1999 Apr 27
3