A2200
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Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Vishay Semiconductors
Wirewound Resistor, Industrial High Power, Vitreous Tubular, Adjustable, Low Values 0.12 to 560
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