E28F004B5-B60 데이터 시트보기 (PDF) - Intel

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E28F004B5-B60

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT

Intel 

E

SMART 5 BOOT BLOCK MEMORY FAMILY

5.3 Capacitance

TA = 25 °C, f = 1 MHz

Symbol

Parameter

Note

Typ

CIN

Input Capacitance

4

6

COUT

Output Capacitance 4, 7

10

1. Sampled, not 100% tested.

Max

8

12

Unit

pF

pF

Conditions

VIN = 0 V

VOUT = 0 V

5.4 DC Characteristics—Commercial and Extended Temperature

Sym

Parameter

Temp Comm Extended

Note Typ Max Typ Max Unit

Test Condition

IIL

Input Load Current

1

ILO Output Leakage Current 1

ICCS VCC Standby Current

1,3

ICCD

ICCR

VCC Deep Power-Down 1

Current

VCC Read Current

1,5,

(Word or Byte Mode)

6

ICCW VCC Program Current

1,4

(Word or Byte Mode)

±1.0

± 10

2.0

130

8

60

65

50

45

±1.0 µA VCC = VCC Max, VIN = VCC or GND

± 10 µA VCC = VCC Max, VIN = VCC or GND

2.5 mA VCC = VCC Max, CE# = RP# =

BYTE# = WP# = VIH

150 µA VCC = VCC Max

CE# = RP# = VCC ± 0.2 V

8 µA VCC = VCC Max, VIN = VCC or GND

RP# = GND ± 0.2 V

65 mA CMOS INPUTS

VCC = VCC Max, CE# = GND,

OE# = VCC, f = 10 MHz (5 V),

IOUT = 0 mA, Inputs=GND or VCC

70 mA TTL INPUTS

VCC = VCC Max, CE# = VIL,

OE# = VIH , f = 10 MHz (5 V),

IOUT = 0 mA, Inputs = VIL or VIH

50 mA VPP = VPPH1 (at 5 V)

45 mA VPP = VPPH2 (at 12 V)

ICCE VCC Erase Current

1,4

35

45 mA VPP = VPPH1 (at 5 V)

30

40 mA VPP = VPPH2 (at 12 V)

ICCES VCC Erase Susp Current 1,2

IPPS VPP Standby Current

1

IPPD VPP Deep Power-Down 1

Current

10

± 10

5.0

12.0 mA CE# = VIH , Block Erase Suspend

± 15 µA VPP < VPPH2

10 µA RP# = GND ± 0.2 V

IPPR VPP Read Current

1

200

200 µA VPP ≥ VPPH2

ADVANCE INFORMATION

27

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