HAT2167H(2003) 데이터 시트보기 (PDF) - Renesas Electronics

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HAT2167H
(Rev.:2003)

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 30

Gate to source breakdown voltage V(BR)GSS ± 20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off) 1.0

Static drain to source on state

resistance

RDS(on) —

RDS(on) —

Forward transfer admittance

|yfs|

42

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Gate resistance

Rg

—

Total gate charge

Qg

—

Gate to source charge

Qgs —

Gate to drain charge

Qgd —

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse recovery trr

—

time

Notes: 4. Pulse test

Typ Max

—

—

—

—

—

± 10

—

1

—

2.5

4.2 5.5

6.1 9.3

70

—

2700 —

620 —

200 —

0.5 —

17

—

8

—

3.7 —

11

—

30

—

45

—

6

—

0.85 1.10

30

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

Ω

nc

nc

nc

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 30 V, VGS = 0

VDS = 10 V, I D = 1 mA

ID = 20 A, VGS = 10 V Note4

ID = 20 A, VGS = 4.5 V Note4

ID = 20 A, VDS = 10 V Note4

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 10 V

VGS = 4.5 V

ID = 40 A

VGS = 10 V, ID = 20 A

VDD ≅ 10 V

RL = 0.5 Ω

Rg = 4.7 Ω

IF = 40 A, VGS = 0 Note4

IF = 40 A, VGS = 0

diF/ dt = 100 A/ µs

Rev.4.00, Jun.04.2003, page 3 of 10

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