IMC010FLSA-ET15 데이터 시트보기 (PDF) - Intel
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IMC010FLSA-ET15 Datasheet PDF : 39 Pages
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SERIES 2 FLASH MEMORY CARDS
OPERATING SPECIFICATlONS
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
b40 C to a85 C
Voltage on Any Pin with
Respect to Ground
b2 0V to VCC a 2 0V(1)
VPP1 VPP2 Supply Voltage with
Respect to Ground
b2 0V to a14 0V(1 2)
VCC Supply Voltage with
Respect to Ground
b0 5V to a7 0V
NOTICE This data sheet contains preliminary infor-
mation on new products in production The specifica-
tions are subject to change without notice Verify with
your local Intel Sales office that you have the latest
data sheet before finalizing a design
WARNING Stressing the device beyond the ‘‘Absolute
Maximum Ratings’’ may cause permanent damage
These are stress ratings only Operation beyond the
‘‘Operating Conditions’’ is not recommended and ex-
tended exposure beyond the ‘‘Operating Conditions’’
may affect device reliability
NOTES
1 Minimum DC input voltage is b0 5V During transitions inputs may undershoot to b2 0V tor periods of less than 20 ns
Maximum DC voltage on output pins is VCC a 0 5V The voltage may overshoot to VCC a 2 0V for periods of less than 20
ns
2 Maximum DC input voltage on VPP1 VPP2 may overshoot to a14 0V for periods of less than 20 ns
COMMERCIAL TEMPERATURE OPERATING CONDITIONS
These operating conditions apply to commercial temperature devices
Symbol
Parameter
Min
Max
Unit
TA
Operating Temperature
0
70
C
VCC
VCC Supply Voltage (5%)
4 75
5 25
V
EXTENDED TEMPERATURE OPERATING CONDITIONS
These operating conditions apply to extended temperature devices
Symbol
Parameter
Min
Max
Unit
TA
Operating Temperature
b40
85
C
VCC
VCC Supply Voltage (5%)
4 75
5 25
V
CHARACTERISTICS
All AC and DC characteristics apply to both commercial and extended temperature devices
COMMON DC CHARACTERISTICS CMOS and TTL
Symbol
Parameter
Notes Min Typ Max Unit Test Condition
ILI
ILO
VIL
VIH
VOL
VOH
VPPL
VPPH
VLKO
Input Leakage Current
Output Leakage Current
Input Low Voltage
13
g1
1
g1
1
b0 5
g 20
g 20
08
mA VCC e VCC Max
VIN e VCC or GND
mA VCC e VCC Max
VOUT e VCC or GND
V
Input High Voltage (TTL)
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
1
24
0 7 VCC
1
VSS
1
40
VPP during Read Only Operations 1 2
00
VPP during Read Write Operations 1
11 4
VCC Erase Write Lock Voltage
1
20
VCC a 0 3 V
VCC a 0 3
04
V VCC e VCC Min
IOL e 3 2 mA
VCC
V VCC e VCC Min
IOH e b2 0 mA
65
V
12 6
V
V
NOTES
1 Values are the same for byte and word wide modes and for all card densities
2 Block Erases Data Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL
3 Exceptions With VIN e GND the leakage on CE1 CE2 REG OE WE will be s 500 mA due to internal pullup
resistors and with VIN e VCC RST leakage will be s 500 mA due to internal pulldown resistor
27
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