IMC010FLSA-ET15 데이터 시트보기 (PDF) - Intel

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IMC010FLSA-ET15

SERIES 2 FLASH MEMORY CARDS

Intel 

SERIES 2 FLASH MEMORY CARDS

DC CHARACTERISTICS CMOS

Symbol

Parameter

ICCR

VCC Read Current

Notes Byte Wide Mode

Min Typ Max

13

45 85

ICCW VCC Write Current

13

ICCE

VCC Erase Current

123

ICCS

ICCSL

IPPW

IPPE

IPPSL

IPPS1

IPPS2

VCC Standby Current

2 Meg

4 Meg

146

10 Meg

20 Meg

VCC Sleep Current

2 Meg

4 Meg

145

10 Meg

20 Meg

VPP Write

13

Current (VPP e VPPH)

VPP Erase

13

Current (VPP e VPPH)

VPP Sleep Current

2 Meg

4 Meg

15

10 Meg

20 Meg

VPP Standby or

Read Current

(VPP s VCC)

2 Meg

4 Meg

16

10 Meg

20 Meg

VPP Standby or

Read Current

(VPP l VCC)

2 Meg

4 Meg

16

10 Meg

20 Meg

35 80

35 80

110 420

160 620

310 1220

560 2200

60

100

260

460

15

15

0 2 10

0 4 20

1

50

2 100

2 0 20

2 2 30

2 8 60

3 8 110

20 400

40 800

100 2000

200 4000

Word Wide Mode Unit Test Condition

Min Typ Max

65 120 mA VCC e VCC Max

Control Signals

e GND

tCYCLE e 200 ns

IOUT e 0 mA

45 110 mA Data Write

in Progress

45 110 mA Block (Pair) Erase

in Progress

110 420

VCC e VCC Max

160 620

Control Signals

mA e VIH

310 1220

560 2200

60

100

mA

260

460

30 mA Data Write

in Progress

30 mA Block (Pair) Erase

in Progress

0 2 10

0 4 20

mA

1

50

2 100

2 0 20

2 2 30

mA

2 8 60

3 8 110

20 400

40 800

mA

100 2000

200 4000

NOTES

1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V T e 25 C

2 The Data Sheet specification for the 28F008SA in Erase Suspend (ICCES) is 5 mA typical and 10 mA max with the device

deselected If the device(s) are read while in Erase Suspend Mode current draw is the sum of ICCES and ICCR

3 Standby or Sleep currents are not included for non-accessed devices

4 Address and data inputs to card static Control line voltages equal to VIH or VIL

5 All 28F008SA devices in Deep-Sleep (Reset-PowerDown) mode

6 In Byte and Word Mode all but two devices in Deep-Sleep

28

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