MDE6IC7120GNR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MDE6IC7120GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain- Source Voltage

Gate- Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

VDSS

VGS

VDD

Tstg

TC

TJ

Pin

Symbol

- 0.5, +66

- 0.5, +10

32, +0

- 65 to +150

150

225

30

Value (2,3)

Vdc

Vdc

Vdc

°C

°C

°C

dBm

Unit

Final Doherty Application

Thermal Resistance, Junction to Case

Case Temperature 81°C, Pout = 28 W CW

Stage 1A, 27 Vdc, IDQ1A = 60 mA

Stage 1B, 27 Vdc, IDQ1B = 60 mA

Stage 2A, 27 Vdc, IDQ2A = 550 mA

Stage 2B, 27 Vdc, VG2B = 2.3 Vdc

Table 3. ESD Protection Characteristics

RθJC

°C/W

4.7

3.7

0.90

0.76

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MDE6IC7120NR1 MDE6IC7120GNR1

2

RF Device Data

Freescale Semiconductor

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