MDE6IC7120GNR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MDE6IC7120GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate- Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

Stage 1 — On Characteristics (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 20 μAdc)

VGS(th)

1

1.7

3

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ1A = IDQ1B = 80 mA)

VGS(Q)

—

2.8

—

Vdc

Fixture Gate Quiescent Voltage

VGG(Q)

8

(VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, Measured in Functional Test)

11

14

Vdc

Stage 2 — Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate- Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

Stage 2 — On Characteristics (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 160 μAdc)

VGS(th)

1

1.7

3

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ2A = 550 mA)

VGS(Q)

—

2.8

—

Vdc

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test)

VGG(Q)

6.6

8.8

11.1

Vdc

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 407 mA)

VDS(on)

0.2

0.3

0.8

Vdc

Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B =

2.3 Vdc, Pout = 25 W Avg., f = 748 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

32.0

34.4

37.0

dB

Power Added Efficiency

PAE

38.0

40.6

—

%

Output Peak - to - Average Ratio @ 0.01% Probability on CCDF

PAR

6.2

6.8

—

dB

Adjacent Channel Power Ratio

ACPR

—

- 41.3

- 38.0

dBc

Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A =

550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg., Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Frequency

Gps

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

728 MHz

35.0

42.0

6.2

- 39.0

748 MHz

34.4

40.6

6.8

- 41.3

768 MHz

33.8

39.1

6.9

- 37.3

1. Each side of device measured separately.

2. Part internally matched both on input and output.

3. Measurement made with device in a Symmetrical Doherty configuration.

4. Measurement made with device in straight lead configuration before any lead forming operation is applied.

(continued)

RF Device Data

Freescale Semiconductor

MDE6IC7120NR1 MDE6IC7120GNR1

3

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