MRF9030LSR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF9030LSR1

945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

20

60

Gps

18

40

16

η

14

12

20

VDD = 26 Vdc

IDQ = 250 mA

f1 = 945 MHz, f2 = 945.1 MHz

0

−20

10

IMD

−40

8

1

−60

10

100

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Power Gain, Efficiency and IMD

versus Output Power

1010

109

108

107

90 100 110 120 130 140 150 160 170 180 190 200 210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

Figure 9. MTTF Factor versus Junction Temperature

MRF9030LSR1

6

RF Device Data

Freescale Semiconductor

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