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RT3P11M 데이터 시트보기 (PDF) - Isahaya Electronics

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RT3P11M Datasheet PDF : 3 Pages
1 2 3
RT3P11M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3P11M is a composite transistor built with two
RT1P141 in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
Unitmm
⑥⑤④
R1 R2
RTr1
RTr2
R2 R1
① ②③
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input Voltage
Collector current
Peak Collector current
Collector dissipationTotal, Ta=25℃)
Junction temperature
Storage temperature
RATING
-50
-10
-50
-40
-100
-200
150
150
-55〜+150
UNIT
V
V
V
V
mA
mA
mW
MARKING
654
.P 1 1
123
ISAHAYA ELECTRONICS CORPORATION

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