SPI11N65C3 데이터 시트보기 (PDF) - Infineon Technologies

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SPI11N65C3

Cool MOS™ Power Transistor

Infineon Technologies 

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

SPP11N65C3,SPA11N65C3

SPI11N65C3

PG-TO262

V DS

RDS(on)

ID

650 V

0.38 Ω

11 A

PG-TO220FP PG-TO220

Type

SPP11N65C3

SPA11N65C3

SPI11N65C3

Package

PG-TO220

PG-TO220FP

PG-TO262

Ordering Code

Q67040-S4557

SP000216318

Q67040-S4561

Marking

11N65C3

11N65C3

11N65C3

Maximum Ratings

Parameter

Symbol

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=2.5A, VDD=50V

Avalanche

energy,

repetitive

tAR

limited

by

T

2)

jmax

ID=4A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

ID

ID puls

EAS

EAR

IAR

VGS

VGS

Ptot

Tj , Tstg

Value

SPP_I SPA

11

111)

7

71)

33

33

340

340

Unit

A

A

mJ

0.6

0.6

4

4

A

±20

±20 V

±30

±30

125

33 W

-55...+150

°C

Rev. 2.91

Page 1

2009-11-30

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