SPI11N65C3 데이터 시트보기 (PDF) - Infineon Technologies

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SPI11N65C3

Cool MOS™ Power Transistor

Infineon Technologies 

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 7 A, VGS = 10 V

SPP11N65C3

2.1

Ω

1.8

1.6

1.4

1.2

1

0.8

0.6

98%

0.4

typ

0.2

0

-60 -20

20

60 100 °C

180

Tj

11 Typ. gate charge

VGS = f (QGate)

parameter: ID = 11 A pulsed

SPP11N65C3

16

V

SPP11N65C3,SPA11N65C3

SPI11N65C3

10 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

40

A

25°C

32

28

24

150°C

20

16

12

8

4

0

0

2

4

6

8 10 12 V 15

VGS

12 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

10 2 SPP11N65C3

A

12

0,2 V

DS max

10

0,8 VDS max

8

10 1

6

4

2

0

0 10 20 30 40 50 nC 70

QGate

10 0

10 -1

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

Rev. 2.91

Page 7

2009-11-30

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