2SC867 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC867 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC867
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:VCBO=400V(min)
APPLICATIONS
·For high voltage and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
400
150
5
1
2
23
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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