BT134W-600E 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT134W-600E

4Q Triac

NXP Semiconductors. 

WeEn Semiconductors

BT134W-600E

4Q Triac

Symbol

Parameter

IH

holding current

VT

on-state voltage

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

Conditions

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 9

VD = 12 V; Tj = 25 °C; Fig. 11

IT = 2 A; Tj = 25 °C; Fig. 12

VDM = 402 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

Min Typ Max Unit

-

11

25

mA

-

2.2 15

mA

-

1.2 1.5 V

-

30

-

V/µs

5. Pinning information

Table 2. Pinning information

Pin

Symbol Description

1

T1

main terminal 1

2

T2

main terminal 2

3

G

gate

4

T2

main terminal 2

Simplified outline

4

123

SC-73 (SOT223)

Graphic symbol

T2

T1

G

sym051

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

BT134W-600E

SC-73

Description

plastic surface-mounted package with increased heatsink; 4

leads

Version

SOT223

7. Marking

Table 4. Marking codes

Type number

BT134W-600E

Marking code

BT134W-6E

BT134W-600E

Product data sheet

All information provided in this document is subject to legal disclaimers.

14 June 2016

© WeEn Semiconductors Co., Ltd. 2016. All rights reserved

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