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100BGQ030 데이터 시트보기 (PDF) - Vishay Semiconductors

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100BGQ030
Vishay
Vishay Semiconductors Vishay
100BGQ030 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
10 000
TJ = 25 °C
VS-100BGQ030
Vishay Semiconductors
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
1000
0
5 10 15 20 25 30 35
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1E+00
160
140
120
DC
100
80
Square wave (D = 0.50)
60 80 % rated VR applied
see note (1)
40
0 20 40 60 80 100 120 140 160
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
180°
120°
80
90°
60°
30°
60
RMS Limit
DC
40
20
0
0
30
60
90
120
150
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 12-Jun-15
3
Document Number: 94579
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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