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100BGQ030 데이터 시트보기 (PDF) - Vishay Semiconductors

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100BGQ030
Vishay
Vishay Semiconductors Vishay
100BGQ030 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
10 000
VS-100BGQ030
Vishay Semiconductors
1000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
Device code VS- 100 BGQ 030
1
2
3
4
1 - Vishay Semiconductors product
2 - Current rating
3 - Essential part number
4 - Voltage code = VRRM
Dimensions
Part marking information
Application note
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
Revision: 12-Jun-15
4
Document Number: 94579
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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