AB28F800BR-T80 데이터 시트보기 (PDF) - Intel
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AB28F800BR-T80 Datasheet PDF : 36 Pages
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E
A28F200BR
Table 2. Bus Operations for Word-Wide Mode (BYTE# = VIH)
Mode
Notes RP# CE# OE# WE# A9
A0
VPP
Read
1,2,3 VIH
VIL
VIL
VIH
X
X
X
Output Disable
VIH
VIL
VIH
VIH
X
X
X
Standby
VIH
VIH
X
X
X
X
X
Deep Power-Down
9
VIL
X
X
X
X
X
X
Intelligent Identifier (Mfr) 4
VIH
VIL
VIL
VIH
VID
VIL
X
Intelligent Identifier
(Device)
4,5
VIH
VIL
VIL
VIH
VID
VIH
X
Write
6,7,8 VIH
VIL
VIH
VIL
X
X
X
DQ0-15
DOUT
High Z
High Z
High Z
0089 H
See Table 4
DIN
Mode
Read
Output Disable
Standby
Deep Power-
Down
Table 3. Bus Operations for Byte-Wide Mode (BYTE# = VIL)
Notes RP# CE# OE# WE# A9
A0
A-1 VPP
1,2,3 VIH
VIL
VIL
VIH
X
X
X
X
VIH
VIL
VIH
VIH
X
X
X
X
VIH
VIH
X
X
X
X
X
X
9
VIL
X
X
X
X
X
X
X
DQ0-7
DOUT
High Z
High Z
High Z
DQ8-14
High Z
High Z
High Z
High Z
Intelligent
4
Identifier (Mfr)
VIH
VIL
VIL
VIH
VID
VIL
X
X
89H High Z
Intelligent
Identifier
(Device)
4,5
VIH
VIL
VIL
VIH
VID
VIH
X
X
See High Z
Table 4
Write
6,7,8 VIH
VIL
VIH
VIL
X
X
X
X
DIN
NOTES:
1. Refer to DC Characteristics.
2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP.
3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.
4. Manufacturer and Device codes may also be accessed via a CUI write sequence, A1-A17 = X, A1-A18 = X.
5. See Table 4 of Device IDs.
6. Refer to Table 5 for valid DIN during a write operation.
7. Command writes for Block Erase or Word/ByteProgram are only executed when VPP = VPPH1 or VPPH2.
8. To program or erase the boot block, hold RP# at VHH or WP# at VIH.
9. RP# must be at GND ± 0.2V to meet the maximum deep power-down current specified.
High Z
ADVANCE INFORMATION
11
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