D2081 데이터 시트보기 (PDF) - Inchange Semiconductor
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D2081 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2081
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 5mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
1.5
V
2.0
V
10 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10 mA
hFE
DC Current Gain
IC= 5A; VCE= 4V
2000
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1.0MHz
IE= -0.5A; VCE= 12V
95
pF
60
MHz
isc Website：www.iscsemi.cn
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