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2SJ412 데이터 시트보기 (PDF) - Toshiba

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2SJ412 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ412
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Gate-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 6 A
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
±10
μA
― −100 μA
100
V
0.8
2.0
V
0.25 0.32
0.15 0.21
4.5 7.7
S
1100
pF
210
pF
440
pF
tr
0V
VGS
ton
10 V
tf
18
ID = 8 A
VOUT
30
ns
VDD ≈ −50 V
18
toff
Duty 1%, tw = 10 μs
65
Qg
48
nC
VDD ≈ −80 V, VGS = 10 V, ID = 16 A
Qgs
29
nC
Qgd
19
nC
Source-Drain Rating and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 16 A, VGS = 0 V
IDR = 16 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
― −16
A
― −64
A
1.7
V
160
ns
0.5
μC
Marking
J412
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Part No. (or abbreviation code)
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
Note 4
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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