2SK3069 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK3069 Datasheet PDF : 10 Pages
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2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
ADE-208-694I (Z)
10th. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source
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