2SK3069 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK3069

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3069

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 60

Gate to source leak current

I GSS

—

Zero gate voltege drain current

I DSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

RDS(on)

—

resistance

—

Forward transfer admittance

Input capacitance

|yfs|

50

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Total gate charge

Qg

—

Gate to source charge

Qgs —

Gate to drain charge

Qgd —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 1. Pulse test

Typ Max

—

—

—

±0.1

—

10

—

2.5

6.0 7.5

8.0 12

80

—

7100 —

1000 —

280 —

125 —

25

—

25

—

60

—

300 —

520 —

330 —

1.05 —

90

—

Unit

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

nc

nc

nc

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

VGS = ±20 V, VDS = 0

VDS = 60 V, VGS = 0

ID = 1 mA, VDS = 10 V Note 1

ID = 40 A, VGS = 10 V Note 1

ID = 40 A, VGS = 4 V Note 1

ID = 40 A, VDS = 10 V Note 1

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 25 V

VGS = 10 V

ID = 75 A

VGS = 10 V, ID = 40 A

RL = 0.75 Ω

IF = 75 A, VGS = 0

IF = 75 A, VGS = 0

diF/ dt = 50 A/ µs

3

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