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2SK3069 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK3069
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK3069 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
0.4
10 A
I
D
= 50 A
20 A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
2SK3069
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V
GS
= 4 V
5
10 V
2
1
12
5 10 20 50 100 200
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
20 A
I
D
= 50 A
12
10 A
8
4V
10, 20, 50 A
4
V
GS
= 10 V
0
–50 0
50 100 150 200
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
500
V
DS
= 10 V
200
Pulse Test
100
50
Tc = –25
°
C
20
10
25
°
C
5
75
°
C
2
1
0.5
0.1 0.3 1 3 10 30 100
Drain Current I
D
(A)
5
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