2SK3069 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SK3069

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Reverse Drain Current vs.

Source to Drain Voltage

100

10 V

80

5V

60

VGS = 0, –5 V

40

20

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

2SK3069

Maximum Avalanche Energy vs.

Channel Temperature Derating

250

I AP = 50 A

200

V DD = 25 V

duty < 0.1%

Rg > 50 Ω

150

100

50

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

7

Share Link: