AS29F040 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS29F040

5V 512K x 8 CMOS FLASH EEPROM

Alliance Semiconductor 

0DUFK#5333

$65<)373

®

'&#HOHFWULFDO#FKDUDFWHULVWLFV

9&&# #813±3189

Parameter

Symbol Test conditions

Min

Max

Unit

Input load current

ILI

VIN = VSS to VCC, VCC = VCC MAX

-

±1

µA

A9 Input load current

ILIT

Output leakage current

ILO

Output short circuit current*

IOS

Active current, read @ 6MHz† ICC

Active current, program/erase** ICC2

VCC = VCC MAX, A9 = 12.5V

VOUT = VSS to VCC, VCC = VCC MAX -

VOUT = 0.5V

-

CE = VIL, OE = VIH

-

CE = VIL, OE = VIH

-

90

µA

±1

µA

200

mA

30

mA

60

mA

Standby current (TTL)

ISB1

CE = OE = VIH, VCC = VCC MAX

-

1.0

mA

Standby current (CMOS)

ISB2

CE = VCC + 0.5V, OE = VIH,

VCC = VCC MAX

-

400

µA

Input low voltage

VIL

-0.5

0.8

V

Input high voltage

VIH

2.0

VCC + 0.5 V

Output low voltage

VOL

IOL = 12mA, VCC = VCC MIN

-

0.45

V

Output high voltage

VOH1 IOH = -2.5 mA, VCC = VCC MIN

2.4

-

V

VOH2 IOH = -100 µA, VCC = VCC MIN

VCC - 0.4

-

V

Low VCC lock out voltage

VLKO

2.8

4.2

V

Input HV select voltage

VID

11.5

12.5

V

* Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. OUT = 0.5V was selected to avoid test problems

caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)

† The ICC current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically is

less than 2 mA/MHz with OE at VIH.

** ICC active while program or erase operations are in progress.

0D[LPXP#QHJDWLYH#RYHUVKRRW#ZDYHIRUP

+0.8V

-0.5V

-2.0V

20 ns 20 ns 20 ns

0D[LPXP#SRVLWLYH#RYHUVKRRW#ZDYHIRUP

VCC + 0.5V

+ 2.0V

VCC + 2.0V

20 ns 20 ns 20 ns

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44

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