EMIF03-SIM01 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

EMIF03-SIM01

3 LINES EMI FILTE INCLUDING ESD PROTECTION

STMicroelectronics 

CROSSTALK BEHAVIOR

Fig. A7: Crosstalk phenomena

RG1

VG1

RG2

Line 1

Line 2

EMIF03-SIM01

RL1

α1VG1 + β V 12 G2

VG2

RL2

α2VG2 + β V 21 G1

DRIVERS

RECEIVERS

The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor ( β12 or β21 )

increases when the gap across lines decreases, particularly in silicon dice. In the example above the

expected signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value

β21VG1. This part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on

the line 2. This phenomenon has to be taken into account when the drivers impose fast digital data or

high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works

with low voltage signal or high load impedance (few kΩ).

1- Digital crosstalk

Fig. A8: Digital crosstalk measurements

+3V

74HC04

B1

+3V

Square

Pulse

Generator

VG1

C1

B3

®

EMI35

SIM01 C3

+3V

74HC04

β21 VG1

Square pulse generator

s frequency = 3.3MHz

s 0 - 3.3V

s Risetime = 30ns

8/11

Share Link: