BF1100R 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BF1100R Datasheet PDF : 14 Pages
| |||
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook,1h6alfpage
ID
(mA)
12
8
4
MLD163
handbook,2h0alfpage
ID
(mA)
15
10
5
R G1 = 100 kΩ
MLD164
147 kΩ
180 kΩ
205 kΩ
249 kΩ
301 kΩ
402 kΩ
511 kΩ
0
0
20
40
60
80
I G1 (µA)
VDS = 9 to 12 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.11 Drain current as a function of gate 1 current;
typical values.
0
0
4
VG2-S = 4 V.
RG1 connected to VGG.
Tj = 25 °C.
8
12
16
VGG = VDS (V)
Fig.12 Drain current as a function of gate 1 supply
voltage (= VGG) and drain supply voltage;
typical values; see Fig.27.
handbook,1h2alfpage
ID
(mA)
8
MLD165
handbook,1h2alfpage
ID
(mA)
8
MLD166
4
4
0
0
2
4
6
8
10
VGG (V)
0
0
4
8
12
VGG (V)
VDS = 9 V; VG2-S = 4 V.
RG1 = 180 kΩ (connected to VGG); Tj = 25 °C.
Fig.13 Drain current as a function of gate 1 voltage
(= VGG); typical values; see Fig.27.
VDS = 12 V; VG2-S = 4 V.
RG1 = 250 kΩ (connected to VGG); Tj = 25 °C.
Fig.14 Drain current as a function of gate 1 voltage;
(= VGG); typical values; see Fig.27.
1995 Apr 25
7
Share Link: 