BF995A(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BF995A Datasheet PDF : 7 Pages
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BF995
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
ID = 10 mA, –VG1S = –VG2S = 4 V
breakdown voltage
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
±VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source
leakage current
±VG2S = 5 V, VG1S = VDS = 0
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA
VDS = 15 V, VG1S = 0, ID = 20 mA
Type
Symbol
V(BR)DS
Min Typ Max Unit
20
V
±V(BR)G1SS 8
14 V
±V(BR)G2SS 8
14 V
±IG1SS
100 nA
±IG2SS
100 nA
BF995
IDSS
4
BF995A
IDSS
4
BF995B
IDSS
9.5
–VG1S(OFF)
18 mA
10.5 mA
18 mA
3.5 V
–VG2S(OFF)
3.5 V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
VG2S = 4 to –2 V, f = 200 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
Symbol Min Typ
y21s
Cissg1
Cissg2
Crss
Coss
Gps
DGps
F
12 15
3.7
1.6
25
1.6
20
50
1.8
Max Unit
mS
pF
pF
fF
pF
dB
dB
2.5 dB
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2 (7)
Document Number 85009
Rev. 3, 20-Jan-99
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