BUV27 데이터 시트보기 (PDF) - ON Semiconductor

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BUV27

POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS

ON Semiconductor 

BUV27

NPN Silicon Power

Transistor

This device is designed for use in switching regulators and motor

control.

Features

• Low Collection Emitter Saturation Voltage

• Fast Switching Speed

• Pb−Free Package is Available*

http://onsemi.com

POWER TRANSISTOR

12 AMPERES

120 VOLTS

70 WATTS

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector−Emitter Sustaining Voltage

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

Collector Current

− Continuous

− Peak (Note 1)

Base Current

Total Device Dissipation (TC = 25°C)

Derate above 25°C

VCEO

VCBO

VEBO

IC

ICM

IB

PD

120

Vdc

240

Vdc

7.0

Vdc

12

Adc

20

4.0

Adc

70

W

0.56

W/°C

Operating and Storage Temperature

THERMAL CHARACTERISTICS

TJ, Tstg − 65 to 150 °C

Rating

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case RqJC

Junction−to−Ambient RqJA

1.78

°C/W

62.5

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

1

2

3

MARKING

DIAGRAM

4

TO−220AB

CASE 221A

STYLE 1

BUV27G

AYWW

BUV27 = Device Code

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

BUV27

BUV27G

TO−220AB

TO−220AB

(Pb−Free)

50 per Rail

50 per Rail

*For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

1

August, 2005 − Rev. 1

Publication Order Number:

BUV27/D

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