10N120BND 데이터 시트보기 (PDF) - Fairchild Semiconductor
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10N120BND
Fairchild Semiconductor
10N120BND Datasheet PDF : 8 Pages
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HGTG10N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
TJ = 150oC, RG = 10Ω, L = 2mH, VCE = 960V
100
50
TC = 75oC, VGE = 15V, IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
10 fMAX2 = (PD - PC) / (EON + EOFF) TC VGE
PC = CONDUCTION DISSIPATION 75oC 15V
(DUTY FACTOR = 50%)
75oC 12V
RØJC = 0.42oC/W, SEE NOTES
110oC 15V
110oC 12V
1
2
5
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
25
250
VCE = 840V, RG = 10Ω, TJ = 125oC
20
200
tSC
ISC
15
150
10
100
5
50
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
50
DUTY CYCLE <0.5%, VGE = 12V
PULSE DURATION = 250µs
40
30
TC = -55oC
20
10
TC = 25oC
TC = 150oC
00
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
RG = 10Ω, L = 2mH, VCE = 960V
4
TJ = 150oC, VGE = 12V, VGE = 15V
3
2
1
TJ = 25oC, VGE = 12V, VGE = 15V
0
0
5
10
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
50
TC = -55oC
40
TC = 25oC
30
TC = 150oC
20
10
0
0
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
RG = 10Ω, L = 2mH, VCE = 960V
1.5
TJ = 150oC, VGE = 12V OR 15V
1.0
TJ = 25oC, VGE = 12V OR 15V
0.5
0
0
5
10
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG10N120BND Rev. B
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