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FDS7764S

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

September 2002

FDS7764S

30V N-Channel PowerTrench SyncFET™

General Description

The FDS7764S is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

RDS(ON) and low gate charge. The FDS7764S includes

an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology.

Applications

• DC/DC converter

• Motor drives

Features

• 13.5 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V

RDS(ON) = 9.0 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (25 nC typical)

• High performance trench technology for extremely

low RDS(ON) and fast switching

• High power and current handling capability

D

D

D

D

SO8SO-8

G

SS

S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7764S

FDS7764S

13’’

5

6

7

8

Ratings

30

±16

13.5

50

2.5

1.2

1.0

–55 to +150

50

30

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

Quantity

2500 units

2002 Fairchild Semiconductor Corporation

FDS7764S Rev D (W)

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