FDS7764S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS7764S Datasheet PDF : 7 Pages
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Typical Characteristics
10
ID = 13.5A
8
6
4
2
0
0
10
VDS = 10V
15V
20V
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
CISS
f = 1MHz
VGS = 0 V
1600
800
CRSS
COSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDS7764S Rev D (W)
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