FDS8447 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8447 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VGS =10V
VGS = 4.5V
30
VGS = 3.5V
20
VGS = 3V
10
0
0.0
0.4
0.8
1.2
1.6
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.0
2.5
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.0
1.5
VGS = 4.5V
VGS = 3.5V
1.0
0.5
0
VGS = 10V
10
20
30
40
50
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.8
ID = 12.8A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction
Temperature
25
ID = 12.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
TJ = 125oC
15
TJ = 25oC
10
5
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)10
Figure 4. On-Resistance vs Gate to Source
Voltage
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
TJ = 150oC
20
TJ = 25oC
10
TJ = -55oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS8447 Rev.B
3
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