FDS6299S(2005) 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDS6299S Datasheet PDF : 6 Pages
| |||
Typical Characteristics (continued)
10
ID = 21A
8
6
4
VDS = 10V
20V
15V
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
0.1
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4800
4000
3200
f = 1MHz
VGS = 0 V
Ciss
2400
1600
Coss
800
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6299S Rev C (W)
Share Link: 