FDS4897C 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4897C

Dual N & P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

November 2005

FDS4897C

Dual N & P-Channel PowerTrench® MOSFET

General Description

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior switching

performance.

Application

• Inverter

• Power Supplies

Features

• Q1: N-Channel

6.2A, 40V

RDS(on) = 29mΩ @ VGS = 10V

RDS(on) = 36mΩ @ VGS = 4.5V

• Q2: P-Channel

–4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V

RDS(on) = 63mΩ @ VGS = –4.5V

• High power handling capability in a widely used

surface mount package

• RoHS compliant

DD2

DD2

DD1

DD1

SO-8

Pin 1 SO-8

G2

S2 G

G1

S1 S

S

S

Q2

5

4

6

3

Q1

7

2

8

1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

PD

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4897C

FDS4897C

13”

©2005 Fairchild Semiconductor Corporation

FDS4897C Rev C(W)

Q1

Q2

40

40

±20

±20

6.2

–4.4

20

–20

2

1.6

1

0.9

–55 to +150

Units

V

V

A

W

°C

78

40

Tape width

12mm

°C/W

°C/W

Quantity

2500 units

www.fairchildsemi.com

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