FDS4897C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4897C Datasheet PDF : 9 Pages
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
Q1
Q1
VDD = 20 V, ID = 1 A,
Q2
tr
Turn-On Rise Time
VGS = 10V, RGEN = 6 Ω
Q1
Q2
td(off)
Turn-Off Delay Time
Q2
Q1
VDD = –20 V, ID = –1 A,
Q2
tf
Turn-Off Fall Time
VGS = –10V, RGEN = 6 Ω
Q1
Q2
Qg
Total Gate Charge
Q1
Q1
VDS = 20 V, ID = 6.2 A, VGS = 10 V
Q2
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1
Q2
Q2
VDS = –20 V, ID = –4.4 A,VGS =–10 V Q1
Q2
Drain–Source Diode Characteristics
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
(Note 2) Q1
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2) Q2
trr
Diode Reverse Recovery Q1
Q1
Time
IF = 6.2 A, diF/dt = 100 A/µs
Q2
Qrr
Diode Reverse Recovery Q2
Q1
Charge
IF = –4.4 A, diF/dt = 100 A/µs
Q2
9
18
ns
12 22
5
10
ns
15 27
23 37
ns
45 72
3
6
ns
18 32
14 20 nC
20 28
2.4
nC
3
2.8
nC
4
0.7 1.2
V
–0.7 –1.2
17
ns
24
7
nC
12
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS4897C Rev C(W)
www.fairchildsemi.com
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