FGPF70N30 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGPF70N30 Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14. Turn-Off Characteristics
vs. Collector Current
1000
Common Emitter
VGE = 15V, RG = 15Ω
V =200V
CC
TC = 25OC
TC = 125OC
100
tr
td(on)
10
0
10 20 30 40 50 60 70
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
500
400
300
tf
200
Common Emitter
VGE = 15V, RG = 15Ω
V =200V
CC
TC = 25OC
TC = 125OC
tf
td(off)
100
0
10 20 30 40 50 60 70
Collector Current, IC [A]
Figure 16. Switching Loss VS Collector Current
1000
100
Eoff
Eon
10
0
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25OC
TC = 125OC
20
40
60
80
100
Gate Resistance, RG [Ω ]
2000
1000
100
Eoff
10
0
Eon
10
Common Emitter
VGE = 15V, RG = 15Ω
V =200V
CC
TC = 25OC
TC = 125OC
20 30 40 50 60 70
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
1E -3
1 E -5
1 E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1
10
5
www.fairchildsemi.com
FGPF70N30 Rev. A
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