H5PS1G43EFR 데이터 시트보기 (PDF) - Hynix Semiconductor

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H5PS1G43EFR

1Gb DDR2 SDRAM

Hynix Semiconductor 

H5PS1G43EFR

H5PS1G83EFR

H5PS1G63EFR

IDD Test Conditions

(IDD values are for full operating range of Voltage and Temperature, Notes 1-5)

Symbol

Conditions

Units

IDD0

Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS

min(IDD); CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCH-

mA

ING;Data bus inputs are SWITCHING

IDD1

Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL

= 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS

is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as

mA

IDD4W

IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and mA

address bus inputs are STABLE; Data bus inputs are FLOATING

IDD2Q Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH;

mA

Other control and address bus inputs are STABLE; Data bus inputs are FLOATING

IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other

mA

control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING

Active power-down current; All banks open; tCK = tCK(IDD); Fast PDN Exit MR(12) = 0

mA

IDD3P CKE is LOW; Other control and address bus inputs are STABLE;

Data bus inputs are FLOATING

Slow PDN Exit MR(12) = 1

mA

Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP

IDD3N =tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus

mA

inputs are SWITCHING; Data bus inputs are SWITCHING

Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD),

IDD4W AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between mA

valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING

Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL

IDD4R = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is

mA

HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as

IDD4W

Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is

IDD5B HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCH-

mA

ING; Data bus inputs are SWITCHING

IDD6

Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are

FLOATING; Data bus inputs are FLOATING

mA

IDD7

Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL

= CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD),

tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are

mA

STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for

detailed timing conditions

Rev. 0.4 / Nov 2008

17

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