IKA10N60T 데이터 시트보기 (PDF) - Infineon Technologies
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IKA10N60T
Infineon Technologies
IKA10N60T Datasheet PDF : 13 Pages
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IKA10N60T
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=23Ω,
Lσ2)=60nH,
Cσ2)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=10A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
12
8
215
38
0.16
0.27
0.43
115
0.38
10
680
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG= 23Ω
Lσ1)=60nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=10A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
10
11
233
63
0.26
0.35
0.61
200
0.92
13
390
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2 Oct-04
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