IS61VPD51236-200TQI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61VPD51236-200TQI

512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

Integrated Silicon Solution 

IS61VPD51232 IS61VPD51236 IS61VPD10018

ISSI ®

INSTRUCTION CODES

Code

000

Instruction

EXTEST

001

IDCODE

010

SAMPLE Z

011

RESERVED

100

SAMPLE/PRELOAD

101

RESERVED

110

RESERVED

111

BYPASS

Description

Captures the Input/Output ring contents. Places the boundary scan register

between the TDI and TDO. Forces all SRAM outputs to High-Z state. This

instruction is not 1149.1 compliant.

Loads the ID register with the vendor ID code and places the register between

TDI and TDO. This operation does not affect SRAM operation.

Captures the Input/Output contents. Places the boundary scan register between

TDI and TDO. Forces all SRAM output drivers to a High-Z state.

Do Not Use: This instruction is reserved for future use.

Captures the Input/Output ring contents. Places the boundary scan register

between TDI and TDO. Does not affect the SRAM operation. This instruction does not

implement 1149.1 preload function and is therefore not 1149.1 compliant.

Do Not Use: This instruction is reserved for future use.

Do Not Use: This instruction is reserved for future use.

Places the bypass register between TDI and TDO. This operation does not

affect SRAM operation.

TAP CONTROLLER STATE DIAGRAM

Test Logic Reset

1

0

Run Test/Idle 1

0

Select DR 1

0

1 Capture DR

0

Shift DR

10

Exit1 DR 1

0

Pause DR

10

0 Exit2 DR

1

1 Update DR

0

Select IR 1

0

1 Capture IR

0

Shift IR

10

Exit1 IR 1

0

Pause IR

10

0 Exit2 IR

1

1 Update IR

0

Integrated Silicon Solution, Inc. — 1-800-379-4774

19

ADVANCE INFORMATION Rev. 00B

09/25/01

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