DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IS61VPD51236-200TQI 데이터 시트보기 (PDF) - Integrated Silicon Solution

부품명
상세내역
제조사
IS61VPD51236-200TQI Datasheet PDF : 24 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
IS61VPD51232 IS61VPD51236 IS61VPD10018
TAP Electrical Characteristics Over the Operating Range(1,2)
Symbol
Parameter
Test Conditions
VOH1
Output HIGH Voltage
IOH = 2.0 mA
VOH2
Output HIGH Voltage
IOH = 100 mA
VOL1
Output LOW Voltage
IOL = 2.0 mA
VOL2
Output LOW Voltage
IOL = 100 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IOLT = 2mA
IX
Input Load Current
GND V I VDDQ
Notes:
1. All Voltage referenced to Ground.
2. Overshoot: VIH (AC) VDD +1.5V for t tTCYC/2,
Undershoot:VIL (AC) 0.5V for t tTCYC/2,
Power-up: VIH < 2.6V and VDD < 2.4V and VDDQ < 1.4V for t < 200 ms.
ISSI ®
Min.
1.7
2.1
1.7
0.3
5
Max.
0.7
0.2
VCC +0.3
0.7
5
Units
V
V
V
V
V
V
mA
TAP AC ELECTRICAL CHARACTERISTICS(1) (OVER OPERATING RANGE)
Symbol Parameter
Min.
tTCYC TCK Clock cycle time
100
fTF
TCK Clock frequency
tTH
TCK Clock HIGH
40
tTL
TCK Clock LOW
40
tTMSS TMS setup to TCK Clock Rise
10
tTDIS
TDI setup to TCK Clock Rise
10
tCS
Capture setup to TCK Rise
10
tTMSH TMS hold after TCK Clock Rise
10
tTDIH
TDI Hold after Clock Rise
10
tCH
Capture hold after Clock Rise
10
tTDOV TCK LOW to TDO valid
tTDOX TCK LOW to TDO invalid
0
Notes:
7. tCS and tCHrefer to the set-up and hold time requirements of latching data from the boundary scan register.
8. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Max.
10
20
Unit
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
Integrated Silicon Solution, Inc. 1-800-379-4774
ADVANCE INFORMATION Rev. 00B
09/25/01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]